ShockleyRamo theorem Consider a pin photodiode with an i-layer width W. A very short pulse of light

ShockleyRamo theorem Consider a pin photodiode with an i-layer width W. A very short pulse of light is absorbed just inside the depletion region on the p+ -side . The photogenerated electrons drift through the i-layer with a velocity given in . What is the current generated by this drift? How long does it last? Suppose that W is 30 µm, and assume that the quantum efficiency is 0.80. A voltage of 20 V is applied to reverse bias the pin detector. The light pulse from a femtosecond laser operating at 515 nm is used for photoexcitation, and the light pulse energy is 37.5 fJ. Assume all of this

ShockleyRamo theorem Consider a pin photodiode with an i-layer width W. A very short pulse of light is absorbed just inside the depletion region on the p+ -side . The photogenerated electrons drift through the i-layer with a velocity given in . What is the current generated by this drift? How long does it last? Suppose that W is 30 µm, and assume that the quantum efficiency is 0.80. A voltage of 20 V is applied to reverse bias the pin detector. The light pulse from a femtosecond laser operating at 515 nm is used for photoexcitation, and the light pulse energy is 37.5 fJ. Assume all of this energy is absorbed very close to the depletion region and p+ -layer boundary, i.e. electrons drift across W and constitute the photocurrent. Calculate the transient photocurrent. How long does it last?